三星混合键合技术预计将用于英伟达下一代AI加速器Feynman，芯片将采用定制HBM

三星混合键合技术预计将用于英伟达下一代AI加速器Feynman，芯片将采用定制HBM

2026-07-21 18:32

ChainThink 消息，三星电子已在平泽 P5 工厂开始建设 Die-to-Wafer（晶粒到晶圆）混合键合量产线，目标用于下一代 HBM 与逻辑半导体的先进封装。

设备方面，三星首选荷兰 Besi，计划采购约 50 台混合键合机，单台约 60 亿韩元（约 430 万美元），价格约为竞品两倍。由于三星要求对设备架构进行定制修改，谈判进展较慢；

同时，Besi 还向台积电和美光供货，因此对单独为三星改机态度谨慎。三星也在评估本土替代方案。子公司 SEMES 已完成 D2W 混合键合机开发并在今年早些时候送样验证；

韩华 Semitech 于 2 月完成第二代“SHB2 Nano”开发，4 月已向 SK 海力士送样。

Citrini 分析师 Jukan 表示，这项技术预计将用于英伟达下一代 AI 加速器 Feynman，该芯片将采用定制 HBM；

三星内部预计相关技术要到 2029 至 2030 年左右才能实现规模化应用。

Disclaimer: Contains third-party opinions, does not constitute financial advice

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